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Journals

  1. 9

    "Field-dependent carrier decay dynamics in strained InxGa1-xN/GaN quantum wells", Y.D. Jho, J.S. Yahng, E. Oh, D.S. Kim, Phys. Rev. B. 66. 035334. (2002).
    Category~2009
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  2. 8

    "Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells", Y.D. Jho, J.S. Yahng, E. Oh, D.S. Kim, Appl. Phys. Lett. 79. 1130. (2001).
    Category~2009
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  3. 7

    "Femtosecond frequency mixing in thick bulk GaAs", Y.D. Jho, K.J. Yee, D.S. Kim, K.S. Lim, Phys. Rev. B. 63. 085206. (2001)
    Category~2009
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  4. 6

    "Coherent LO Phonon Oscillations in Bulk GaAs and in GaAs/AlGaAs Multiple Quantum Wells", K.J. Yee, D.S. Yee, Y.D. Jho, D.S. Kim, Y.S. Lim, K.S. Lim, J. Kor. Phys. Society. 37. 725. (2000)
    Category~2009
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  5. 5

    "The influence of surfaces and interfaces on coherent phonons in semiconductors", C.K. Sun, J.C. Liang, S.P. Denbaars, D.S. KIM, Y.D. Jho(appeared as Y.D. Cho), G.D. Sanders, J. Simmons, C.J. Stanton, Superlattice and Microstructures. 27. 593. (2000)
    Category~2009
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  6. 4

    "Real-to-Virtual Transition in Bulk GaAs: the Thickness Dependence", Y.D. Jho, J.Y. Lee, J.S. Yahng, K.J. Yee, S.C. Hohng, D.S. Kim, K.S. Lim, J. Kor. Phys. Society. 37. 728. (2000)
    Category~2009
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  7. 3

    "Real-virtual transition in bulk GaAs: the thickness dependence", Y.D. Jho, D.S. Kim, Proc. SPIE. Int. Soc. Opt. Eng. 3940. 279. (2000)
    Category~2009
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  8. 2

    "Femtosecond pump-probe and four-wave mixing studies of excitons in GaN", Y.D. Jho, D.S. Kim, A.J. Fischer, J.J. Song, J. Kenrow, K. El Sayed, C.J. Stanton, Proc. SPIE. Int. Soc. Opt. Eng. 3940. 246. (2000)
    Category~2009
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  9. 1

    "Femtosecond Four-Wave Mixing Experiments on GaAs Quantum Wells Using Two Independently Tunable Lasers", D.S. Kim, J.Y. Sohn, J.S. Yahng, Y.H. Ahn, K.J. Yee, D.S. Yee, Y.D. Jho, S.C. Hohng, D.H. Kim, W.S. Kim, J.C. Woo, T. Meier, S.W. Koch, D.H. Woo, E.K. Kim, S.H. Kim, C.S. Kim, Phys. Rev. Lett. 80. 4803. (1998).
    Category~2009
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